RSC_Materials Horizons
21 December 2024
Issue 24
Page 6171 to 6544
A transparent p-type semiconductor designed via a polarizability-enhanced strongly correlated insulator oxide matrix
Electron-transporting transparent conducting oxides (TCOs) are a commercial reality, however, hole-transporting counterparts are far more challenging because of limited material design. Here, we propose a strategy for enhancing the hole conductivity without deteriorating the band gap (Eg) and workfunction (Φ) by Cu incorporation in a strongly correlated NiWO4 insulator. The optimal Cu-doped NiWO4 (Cu0.185Ni0.815WO4) exhibits a resistivity reduction of ∼109 times versus NiWO4 as well as band-like charge transport with the hole mobility approaching 7 cm2 V−1 s−1 at 200 K, a deep Φ of 5.77 eV, and Eg of 2.8 eV. Experimental and theoretical data reveal that the strength of the electron correlation in NiWO4 is unaffected by Cu incorporation, while the promoted polarizability weakens electron–phonon coupling, promoting the formation of large polarons. Quantum dot light-emitting and oxide p/n junction devices incorporating Cu0.185Ni0.815WO4 exhibit remarkable performances, demonstrating that our approach can be deployed to discover new p-type TCOs.
- Seung Yong Lee
- Hyun Jae Kim
- Sangjun Sim
- Jae-Hoon Lee
- Sora Yun
- Joonho Bang
- Kyoung Won Park
- Chul Jong Han
- Hyun-Min Kim
- Heesun Yang
- Bongjae Kim
- Seongil Im
- Antonio Facchetti
- Min Suk Oh
- Kyu Hyoung Lee
- Kimoon Lee
https://pubs.rsc.org/en/journals/journalissues/mh#!issueid=mh011024&type=current&issnprint=2051-6347
Image created by minjeong Kim / Nanosphere
RSC_Materials Horizons
21 December 2024
Issue 24
Page 6171 to 6544
A transparent p-type semiconductor designed via a polarizability-enhanced strongly correlated insulator oxide matrix
Electron-transporting transparent conducting oxides (TCOs) are a commercial reality, however, hole-transporting counterparts are far more challenging because of limited material design. Here, we propose a strategy for enhancing the hole conductivity without deteriorating the band gap (Eg) and workfunction (Φ) by Cu incorporation in a strongly correlated NiWO4 insulator. The optimal Cu-doped NiWO4 (Cu0.185Ni0.815WO4) exhibits a resistivity reduction of ∼109 times versus NiWO4 as well as band-like charge transport with the hole mobility approaching 7 cm2 V−1 s−1 at 200 K, a deep Φ of 5.77 eV, and Eg of 2.8 eV. Experimental and theoretical data reveal that the strength of the electron correlation in NiWO4 is unaffected by Cu incorporation, while the promoted polarizability weakens electron–phonon coupling, promoting the formation of large polarons. Quantum dot light-emitting and oxide p/n junction devices incorporating Cu0.185Ni0.815WO4 exhibit remarkable performances, demonstrating that our approach can be deployed to discover new p-type TCOs.
https://pubs.rsc.org/en/journals/journalissues/mh#!issueid=mh011024&type=current&issnprint=2051-6347
Image created by minjeong Kim / Nanosphere