ACS_Applied Materials & Interfaces_cover Picture
February 12, 2020
Volume 12, Issue 6
Pages 6797-7854
Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications
We demonstrated an enhancement-mode quasi-two-dimensional (quasi-2D) ultrawide bandgap β-Ga2O3 FET with a novel graphene gate architecture. Then, we monolithically integrated it with a depletion-mode quasi-2D β-Ga2O3 FET, achieving an ultrawide bandgap-based logic circuit.
https://pubs.acs.org/toc/aamick/12/6
Image created by minjeong Kim / Nanosphere
ACS_Applied Materials & Interfaces_cover Picture
February 12, 2020
Volume 12, Issue 6
Pages 6797-7854
Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications
We demonstrated an enhancement-mode quasi-two-dimensional (quasi-2D) ultrawide bandgap β-Ga2O3 FET with a novel graphene gate architecture. Then, we monolithically integrated it with a depletion-mode quasi-2D β-Ga2O3 FET, achieving an ultrawide bandgap-based logic circuit.
Janghyuk Kim
Jihyun Kim
https://pubs.acs.org/toc/aamick/12/6
Image created by minjeong Kim / Nanosphere