ACS_Applied Materials & Interfaces_cover Picture
September 2, 2020
Volume 12, Issue 35
Pages 38815-39936
Effect of the Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of the Amorphous In–Zn–O Film
This study reports on the effect of a bilayer period on the growth behavior, microstructure evolution, and electrical properties of atomic layer deposition (ALD) deposited In–Zn–O (IZO) films, fixing the ALD cycle ratio of In–O/Zn–O as 9:1. Here, the bilayer period is defined as the total number of ALD cycles in one supercycle of In–O and Zn–O by alternately stacking Zn–O and In–O layers at a temperature of 220 °C. IZO films with a bilayer period from 10 to 40 cycles, namely, IZO[In–O/Zn–O = 9:1] to IZO[36:4], result to form an amorphous phase with a resistivity of 4.94 × 10–4 Ω·cm. However, by increasing the bilayer period above 100 cycles, the IZO films begin to form a mixed amorphous–nanocrystalline microstructure, resulting from the limited intermixing at the interfaces. Concomitantly, the overall film resistivity is considerably increased with a simultaneous decrease in both the carrier mobility and the concentration. These results not only reveal the importance of the bilayer period in designing the ALD stacking sequence in the ALD-IZO, but also provide the possibility of forming various multilayered materials with different electrical properties.
- Sangbong Lee
- Yun-Ho Kang
- Min-Sik Kim
- Hyerin Lee
- Yeong-Ho Cho
- Minsu Kim
- Tae-Sik Yoon
- Hyun-Mi Kim
- Ki-Bum Kim
https://pubs.acs.org/toc/aamick/12/35
Image created by minjeong Kim / Nanosphere
ACS_Applied Materials & Interfaces_cover Picture
September 2, 2020
Volume 12, Issue 35
Pages 38815-39936
Effect of the Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of the Amorphous In–Zn–O Film
This study reports on the effect of a bilayer period on the growth behavior, microstructure evolution, and electrical properties of atomic layer deposition (ALD) deposited In–Zn–O (IZO) films, fixing the ALD cycle ratio of In–O/Zn–O as 9:1. Here, the bilayer period is defined as the total number of ALD cycles in one supercycle of In–O and Zn–O by alternately stacking Zn–O and In–O layers at a temperature of 220 °C. IZO films with a bilayer period from 10 to 40 cycles, namely, IZO[In–O/Zn–O = 9:1] to IZO[36:4], result to form an amorphous phase with a resistivity of 4.94 × 10–4 Ω·cm. However, by increasing the bilayer period above 100 cycles, the IZO films begin to form a mixed amorphous–nanocrystalline microstructure, resulting from the limited intermixing at the interfaces. Concomitantly, the overall film resistivity is considerably increased with a simultaneous decrease in both the carrier mobility and the concentration. These results not only reveal the importance of the bilayer period in designing the ALD stacking sequence in the ALD-IZO, but also provide the possibility of forming various multilayered materials with different electrical properties.
https://pubs.acs.org/toc/aamick/12/35
Image created by minjeong Kim / Nanosphere