wiley_ADVANCED ELECTRONIC MATERIALS _ Front cover Picture
Volume6, Issue7
July 2020
2070030
Low‐Power Computing: Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric
A p‐type tunneling field‐effect transistor based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing ion gel dielectric as top gate, is proposed by Sung‐Yool Choi and co‐workers in article number 2000091. Band‐to‐band tunneling is achieved by modulating the band alignment of the WSe2 and MoS2 heterojunction by gating the WSe2 channel through the ion gel top gate. This work holds considerable promise for low‐power computational devices based on integrated circuits.
- Hyun Bae Jeon
- Gwang Hyuk Shin
Khang June Lee
Sung‐Yool Choi
https://onlinelibrary.wiley.com/doi/10.1002/aelm.202070030
Image created by minjeong Kim / Nanosphere
Volume6, Issue7
July 2020
2070030
Low‐Power Computing: Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric
A p‐type tunneling field‐effect transistor based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing ion gel dielectric as top gate, is proposed by Sung‐Yool Choi and co‐workers in article number 2000091. Band‐to‐band tunneling is achieved by modulating the band alignment of the WSe2 and MoS2 heterojunction by gating the WSe2 channel through the ion gel top gate. This work holds considerable promise for low‐power computational devices based on integrated circuits.
Khang June Lee
Sung‐Yool Choi
https://onlinelibrary.wiley.com/doi/10.1002/aelm.202070030
Image created by minjeong Kim / Nanosphere