ACS Applied Electronic Materials
June 22, 2021
Volume 3, Issue 6
Pages 2423-2831
Large-Area Bernal-Stacked Bilayer Graphene Film on a Uniformly Rough Cu Surface via Chemical Vapor Deposition
Herein, we introduced surface modification of a Cu catalyst by employing CH4 pre-annealing, which changed the uniformly rough Cu surface; this resulted in formation of high-quality and uniform Bernal-stacked bilayer graphene as well as monolayer graphene due to controlled synthesis time. A well-designed Cu surface was developed for synthesis of bilayer graphene with high coverage (>95%) and a high Bernal-stacking ratio (∼99%). Dual-gated transistors of Bernal-stacked bilayer graphene showed typical tunable transfer characteristics under varying gate voltages with carrier mobilities of 1000–2000 cm2 V–1 s–1. Through density functional theory calculations, we demonstrated that a uniformly rough Cu surface is favorable for synthesis of Bernal-stacked bilayer graphene. Finally, we employed bilayer graphene as a perfect diffusion barrier facilitated by complementing the diffusion pathway of numerous grain boundaries in graphene.
- Myungwoo Son
- Jaewon Jang
- Gi-Hwan Kim
- i-Hwan Lee
- Dong Won Chun
- Jee-Hwan Bae
- In S. Kim
- Moon-Ho Ham
- Sang-Soo Chee
ACS Applied Electronic Materials | Vol 3, No 6
Image created by minjeong Kim / Nanosphere
ACS Applied Electronic Materials
June 22, 2021
Volume 3, Issue 6
Pages 2423-2831
Large-Area Bernal-Stacked Bilayer Graphene Film on a Uniformly Rough Cu Surface via Chemical Vapor Deposition
Herein, we introduced surface modification of a Cu catalyst by employing CH4 pre-annealing, which changed the uniformly rough Cu surface; this resulted in formation of high-quality and uniform Bernal-stacked bilayer graphene as well as monolayer graphene due to controlled synthesis time. A well-designed Cu surface was developed for synthesis of bilayer graphene with high coverage (>95%) and a high Bernal-stacking ratio (∼99%). Dual-gated transistors of Bernal-stacked bilayer graphene showed typical tunable transfer characteristics under varying gate voltages with carrier mobilities of 1000–2000 cm2 V–1 s–1. Through density functional theory calculations, we demonstrated that a uniformly rough Cu surface is favorable for synthesis of Bernal-stacked bilayer graphene. Finally, we employed bilayer graphene as a perfect diffusion barrier facilitated by complementing the diffusion pathway of numerous grain boundaries in graphene.
ACS Applied Electronic Materials | Vol 3, No 6
Image created by minjeong Kim / Nanosphere