Wiley_ADVANCED ELECTRONIC MATERIALS
Volume 9, Issue 7
July 2023
High-Performance Graphene-Dielectric Interface by UV-Assisted Atomic Layer Deposition for Graphene Field Effect Transistor (Adv. Electron. Mater. 7/2023)
In article number 2300074 Jeong Woo Shin, Jihwan An, and co-workers show the application of ultra-violet light-assisted atomic layer deposition (UV-ALD) to effectively functionalize graphene surfaces and fabricate high-performance graphene field effect transistors (GFETs). The GFET with an UV-ALD Al2O3 dielectric layer shows a low Dirac voltage and a high hole mobility that is 3 times improved compared to those by thermal ALD. A high quality interface between 2D material and atomic layer deposited thin film is demonstrated.
- Geonwoo Park
- Dohyun Go
- Sungchan Jo
- Tae Hoon Lee
- Jeong Woo Shin
- Jihwan An
https://onlinelibrary.wiley.com/doi/10.1002/aelm.202370031
Image created by minjeong Kim / Nanosphere
Wiley_ADVANCED ELECTRONIC MATERIALS
Volume 9, Issue 7
July 2023
High-Performance Graphene-Dielectric Interface by UV-Assisted Atomic Layer Deposition for Graphene Field Effect Transistor (Adv. Electron. Mater. 7/2023)
In article number 2300074 Jeong Woo Shin, Jihwan An, and co-workers show the application of ultra-violet light-assisted atomic layer deposition (UV-ALD) to effectively functionalize graphene surfaces and fabricate high-performance graphene field effect transistors (GFETs). The GFET with an UV-ALD Al2O3 dielectric layer shows a low Dirac voltage and a high hole mobility that is 3 times improved compared to those by thermal ALD. A high quality interface between 2D material and atomic layer deposited thin film is demonstrated.
https://onlinelibrary.wiley.com/doi/10.1002/aelm.202370031
Image created by minjeong Kim / Nanosphere