ACS_Chemistry of Materials


ACS_Chemistry of Materials

November 28, 2023

Volume 35, Issue 22

Pages 9447-9818

Ambipolar Charge Transport in p-Type Cyclopentadithiophene-Based Polymer Semiconductors Enabled by D–A–A–D Configuration

Polymer semiconductors with hysteresis-free ambipolar charge transport characteristics are key elements for developing high-performance organic field-effect transistors and circuits. In this study, a new and facile strategy of simply reconfiguring the donor (D) and acceptor (A) moieties in the order D–A–A–D in the repeat units was proposed to prepare D–A-type polymer semiconductors with enhanced electron and hole mobilities and hysteresis-free transistor characteristics. In contrast to the conventional D–A-type polymer semiconductor based on cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PT) (hereafter, PCDTPT), the newly developed polymer with CDT–PT–PT–CDT configuration (hereafter, PCPPC) exhibited hysteresis-free transistor characteristics and enhanced electron and hole mobilities of 0.41 and 1.50 cm2 V–1 s–1, respectively. Such improvements were attributed to the deepened conduction band edge of PCPPC compared with that of its D–A-type counterpart, PCDTPT. Owing to the improved ambipolar charge-transport characteristics, the organic complementary metal-oxide semiconductor inverters fabricated with the PCPPC charge transporting layers exhibited a remarkably high gain of greater than 165. Our results provided a simple but effective strategy for designing high-performance ambipolar polymer 

  • Hyeonjin Yoo
  • Mingi Sung
  • Hyungju Ahn
  • Dohyun Yang
  • Jin Soo Yoo
  • Junghoon Lee
  • Byoung Hoon Lee