Wiley_ADVANCED FUNCTIONAL MATERIALS
Volume33, Issue19
May 8, 2023
2370121
Photopatternable High-k Polysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties
In article number 2214865, Insik In, Yong Jin Jeong, Se Hyun Kim, and co-workers prepare two types of UV-curable high-dielectric-constant polysilsesquioxanes by introducing epoxy-containing side chains: 1) glycidyl epoxy-containing linear groups and 2) bulky cycloaliphatic epoxy-containing groups. The structure of the side chains influenced the UV curing behavior and capacitance characteristics of polysilsesquioxanes. These polysilsesquioxanes are used to implement logic gates and memory cells exhibiting low-voltage and non-destructive operations.
- Heqing Ye
- Eunji Park
- Su Cheol Shin
- G. Murali
- Daehyun Kim
- Jihoon Lee
- In Ho Kim
- Sung-Jin Kim
- Se Hyun Kim
- Yong Jin Jeong
- Insik In
https://onlinelibrary.wiley.com/toc/16163028/2023/33/19
Image created by minjeong Kim / Nanosphere
Wiley_ADVANCED FUNCTIONAL MATERIALS
Volume33, Issue19
May 8, 2023
2370121
Photopatternable High-k Polysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties
In article number 2214865, Insik In, Yong Jin Jeong, Se Hyun Kim, and co-workers prepare two types of UV-curable high-dielectric-constant polysilsesquioxanes by introducing epoxy-containing side chains: 1) glycidyl epoxy-containing linear groups and 2) bulky cycloaliphatic epoxy-containing groups. The structure of the side chains influenced the UV curing behavior and capacitance characteristics of polysilsesquioxanes. These polysilsesquioxanes are used to implement logic gates and memory cells exhibiting low-voltage and non-destructive operations.
https://onlinelibrary.wiley.com/toc/16163028/2023/33/19
Image created by minjeong Kim / Nanosphere