ACS_Chemistry of Materials
November 28, 2023
Volume 35, Issue 22
Pages 9447-9818
Ambipolar Charge Transport in p-Type Cyclopentadithiophene-Based Polymer Semiconductors Enabled by DโAโAโD Configuration
Polymer semiconductors with hysteresis-free ambipolar charge transport characteristics are key elements for developing high-performance organic field-effect transistors and circuits. In this study, a new and facile strategy of simply reconfiguring the donor (D) and acceptor (A) moieties in the order DโAโAโD in the repeat units was proposed to prepare DโA-type polymer semiconductors with enhanced electron and hole mobilities and hysteresis-free transistor characteristics. In contrast to the conventional DโA-type polymer semiconductor based on cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PT) (hereafter, PCDTPT), the newly developed polymer with CDTโPTโPTโCDT configuration (hereafter, PCPPC) exhibited hysteresis-free transistor characteristics and enhanced electron and hole mobilities of 0.41 and 1.50 cm2 Vโ1 sโ1, respectively. Such improvements were attributed to the deepened conduction band edge of PCPPC compared with that of its DโA-type counterpart, PCDTPT. Owing to the improved ambipolar charge-transport characteristics, the organic complementary metal-oxide semiconductor inverters fabricated with the PCPPC charge transporting layers exhibited a remarkably high gain of greater than 165. Our results provided a simple but effective strategy for designing high-performance ambipolar polymerย
- Hyeonjin Yoo
- Mingi Sung
- Hyungju Ahn
- Dohyun Yang
- Jin Soo Yoo
- Junghoon Lee
- Byoung Hoon Lee
https://pubs.acs.org/doi/10.1021/acs.chemmater.3c01570
ACS_Chemistry of Materials
November 28, 2023
Volume 35, Issue 22
Pages 9447-9818
Ambipolar Charge Transport in p-Type Cyclopentadithiophene-Based Polymer Semiconductors Enabled by DโAโAโD Configuration
Polymer semiconductors with hysteresis-free ambipolar charge transport characteristics are key elements for developing high-performance organic field-effect transistors and circuits. In this study, a new and facile strategy of simply reconfiguring the donor (D) and acceptor (A) moieties in the order DโAโAโD in the repeat units was proposed to prepare DโA-type polymer semiconductors with enhanced electron and hole mobilities and hysteresis-free transistor characteristics. In contrast to the conventional DโA-type polymer semiconductor based on cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PT) (hereafter, PCDTPT), the newly developed polymer with CDTโPTโPTโCDT configuration (hereafter, PCPPC) exhibited hysteresis-free transistor characteristics and enhanced electron and hole mobilities of 0.41 and 1.50 cm2 Vโ1 sโ1, respectively. Such improvements were attributed to the deepened conduction band edge of PCPPC compared with that of its DโA-type counterpart, PCDTPT. Owing to the improved ambipolar charge-transport characteristics, the organic complementary metal-oxide semiconductor inverters fabricated with the PCPPC charge transporting layers exhibited a remarkably high gain of greater than 165. Our results provided a simple but effective strategy for designing high-performance ambipolar polymerย
https://pubs.acs.org/doi/10.1021/acs.chemmater.3c01570