RSC_Journal of Materials Chemistry C
High-temperature atomic layer deposition of HfO2 film with low impurity using a novel Hf precursor
We compared the physicochemical and electrical properties of HfO2 thin films grown at a high temperature of 350 °C using tris(dimethylamido)cyclopentadienylhafnium (CpHf(NMe2)3) and a novel Hf precursor, tris(dimethylamido)isopropenylcyclopentadienylhafnium (FuHf(NMe2)3). Experimental results indicate that the FuHf(NMe2)3 precursor exhibits superior thermal stability compared to the CpHf(NMe2)3 precursor, making it highly advantageous for high-temperature processes. Accordingly, the ALD temperature window range of the film grown using FuHf(NMe2)3 is higher by approximately 50 °C. Due to the enhanced thermal stability, the HfO2 film grown using FuHf(NMe2)3 exhibits reduced impurity concentration compared to the film grown using CpHf(NMe2)3, resulting in increased physical density. Consequently, the improved physicochemical properties of HfO2 films grown using FuHf(NMe2)3 enhanced their electrical characteristics including dielectric constant, leakage current, and dielectric breakdown properties.
- Jae Chan Park
- Chang Ik Choi
- Woong Pyo Jeon
- Tran Thi Ngoc
- Woo-Hee Kim
- Ji-Hoon Ahn
- Bonggeun Shong
- Tae Joo Park
https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc01256a
Image created by minjeong Kim / Nanosphere
RSC_Journal of Materials Chemistry C
High-temperature atomic layer deposition of HfO2 film with low impurity using a novel Hf precursor
We compared the physicochemical and electrical properties of HfO2 thin films grown at a high temperature of 350 °C using tris(dimethylamido)cyclopentadienylhafnium (CpHf(NMe2)3) and a novel Hf precursor, tris(dimethylamido)isopropenylcyclopentadienylhafnium (FuHf(NMe2)3). Experimental results indicate that the FuHf(NMe2)3 precursor exhibits superior thermal stability compared to the CpHf(NMe2)3 precursor, making it highly advantageous for high-temperature processes. Accordingly, the ALD temperature window range of the film grown using FuHf(NMe2)3 is higher by approximately 50 °C. Due to the enhanced thermal stability, the HfO2 film grown using FuHf(NMe2)3 exhibits reduced impurity concentration compared to the film grown using CpHf(NMe2)3, resulting in increased physical density. Consequently, the improved physicochemical properties of HfO2 films grown using FuHf(NMe2)3 enhanced their electrical characteristics including dielectric constant, leakage current, and dielectric breakdown properties.
https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc01256a
Image created by minjeong Kim / Nanosphere