Wiley_ADVANCED MATERIALS
Volume36, Issue28
July 11, 2024
2470226
Phase-Centric MOCVD Enabled Synthetic Approaches for Wafer-Scale 2D Tin Selenides (Adv. Mater. 28/2024)
In article number 2400800, Sungkyu Kim, Feng Ding, Joonki Suh, and co-workers introduce so-called phase-centric approach for producing post-transition metal chalcogenides using low-temperature metal–organic chemical vapor deposition (MOCVD). High-crystalline 2D SnSe2 films can be directly prepared in wafer scale with excellent uniformity. With theoretical inputs, the authors indirectly produce SnSe film with all benefits of MOCVD. This set of techniques will provide a new route to the BEOL-compatible preparation of high-quality post-transition metal chalcogenides.
- Sungyeon Kim
- Wookhee Lee
- Kyungmin Ko
- Hanbin Cho
- Hoyeon Cho
- Seonhwa Jeon
- Changwook Jeong
- Sungkyu Kim
- Feng Ding
- Joonki Suh
https://onlinelibrary.wiley.com/doi/10.1002/adma.202470226
Wiley_ADVANCED MATERIALS
Volume36, Issue28
July 11, 2024
2470226
Phase-Centric MOCVD Enabled Synthetic Approaches for Wafer-Scale 2D Tin Selenides (Adv. Mater. 28/2024)
In article number 2400800, Sungkyu Kim, Feng Ding, Joonki Suh, and co-workers introduce so-called phase-centric approach for producing post-transition metal chalcogenides using low-temperature metal–organic chemical vapor deposition (MOCVD). High-crystalline 2D SnSe2 films can be directly prepared in wafer scale with excellent uniformity. With theoretical inputs, the authors indirectly produce SnSe film with all benefits of MOCVD. This set of techniques will provide a new route to the BEOL-compatible preparation of high-quality post-transition metal chalcogenides.
https://onlinelibrary.wiley.com/doi/10.1002/adma.202470226