Wiley_Advanced Science

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Wiley_Advanced Science

Volume13, Issue40

17 July 2026

e76358


Sustainable Synaptic Device with Two-Dimensional Ferroelectric Materials for Neuromorphic Computing (Adv. Sci. 40/2026)

Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae


α-In2Se3-based FeSFETs can operate as sustainable synaptic devices by exploiting polarization switching driven by both out-of-plane and in-plane dipole components. When the devices enter a fatigued state, current-annealing assisted by conductance modulation can markedly recover and extend their endurance. Furthermore, such current annealing can be selectively and dynamically applied to defective cells in real time at the system level, while sustaining optimized and practical power consumption. More details can be found in the Research Article by TaeWan Kim, Hagyoul Bae, and co-workers (DOI: 10.1002/advs.202600064).


https://advanced.onlinelibrary.wiley.com/doi/10.1002/advs.76358