Wiley_Advanced Materials Technologies

Volume7, Issue12

December 2022

2270076

Observation of Controllable Negative Differential Resistance Behaviors through Morphology-Dependent Zinc Oxide/p-Si Heterointerface Structures (Adv. Mater. Technol. 12/2022)

In article number 2201028, Hyung Joong Yun, Hocheon Yoo, and co-workers present negative differential resistive behavior resulting from electron tunneling at the zinc oxide nanoparticle/silicon heterointerface. The principle of negative differential resistive behaviors is elucidated through a comprehensive study, including an analysis of the energy band structure, morphological investigation, and electrical characterization.

• Somi Kim
• Taehyun Park
• Hyung Joong Yun
• Hocheon Yoo

Observation of Controllable Negative Differential Resistance Behaviors through Morphology‐Dependent Zinc Oxide/p‐Si Heterointerface Structures (Adv. Mater. Technol. 12/2022) - Kim - 2022 - Advanced Materials Technologies - Wiley Online Library 

Image created by minjeong Kim / Nanosphere

Observation of Controllable Negative Differential Resistance Behaviors through Morphology‐Dependent Zinc Oxide/p‐Si Heterointerface Structures (Adv. Mater. Technol. 12/2022) - Kim - 2022 - Advanced Materials Technologies - Wiley Online Library